发明名称 METHOD FOR ELECTRON BEAM LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To improve precision in overwriting by eliminating deteriorated dimensional precision by the shifted positional error considered to be caused by the blurred electron beam in a overwriting method for improving a connecting accuracy in a batch graphic illuminating method. SOLUTION: A method for the electron beam lithography comprises the steps of cutting out a different batch graphic form from a pattern, deviating fulcra of a plurality of batch graphic forms, and overwriting.
申请公布号 JP2001358053(A) 申请公布日期 2001.12.26
申请号 JP20000178624 申请日期 2000.06.14
申请人 HITACHI LTD 发明人 HAYATA YASUNARI;SATO HIDETOSHI;GOTO YASUKO
分类号 G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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