发明名称 |
METHOD FOR ELECTRON BEAM LITHOGRAPHY |
摘要 |
PROBLEM TO BE SOLVED: To improve precision in overwriting by eliminating deteriorated dimensional precision by the shifted positional error considered to be caused by the blurred electron beam in a overwriting method for improving a connecting accuracy in a batch graphic illuminating method. SOLUTION: A method for the electron beam lithography comprises the steps of cutting out a different batch graphic form from a pattern, deviating fulcra of a plurality of batch graphic forms, and overwriting.
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申请公布号 |
JP2001358053(A) |
申请公布日期 |
2001.12.26 |
申请号 |
JP20000178624 |
申请日期 |
2000.06.14 |
申请人 |
HITACHI LTD |
发明人 |
HAYATA YASUNARI;SATO HIDETOSHI;GOTO YASUKO |
分类号 |
G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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