| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of the conventional semiconductor element that the restraining a semiconductor element provided with a guard ring formed through a usual diffusion method from becoming unnecessarily large in size, due to the fact that the position of the guard ring is required to be determined, taking the effect of lateral diffusion into consideration. SOLUTION: A groove is cut in the surface of a silicon base material 1 by a reactive ion etching method, at a position at which a gourd ring 3 is formed, and silicon different in characteristics from the silicon base material is deposited in the groove for the formation of the guard ring.
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