发明名称 Thin film capacitor with an improved top electrode
摘要 A top electrode of a thin film capacitor includes a dielectric oxide layer, a first conductive layer on the dielectric oxide layer, and a second conductive layer over the first conductive layer, wherein the first conductive layer processes at least one of a lower oxidizability and a lower diffusability than the second conductive layer.
申请公布号 US6333537(B1) 申请公布日期 2001.12.25
申请号 US19990255843 申请日期 1999.02.23
申请人 NEC CORPORATION 发明人 ARITA KOJI
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01C27/108;H01C29/76;H01C29/54;H01C31/119 主分类号 H01L27/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利