Semiconductor device capable of stably generating internal voltage with low supply voltage

摘要

Change in internal voltage on an internal voltage line is detected as discharging current of a capacitance element via an MOS transistor to change a charged voltage of the capacitance element. According to the charged voltage of the capacitance element, a current drive transistor is driven to supply a current to the internal voltage line. The internal voltage is stably generated with low current consumption and small occupation area.