发明名称 Latch type level shift circuit
摘要 A latch type level shift circuit includes an internal power supply potential generating circuit for generating first and second internal power supply potentials; a latch circuit having first and second nodes and driven by the first and second internal power supply potentials; a level shifter having first and second output terminals and driven by the first internal power supply potential and a fixed potential; a first MOS transistor having a gate applied with the fixed potential; and a second MOS transistor having a gate applied with the fixed potential. The first MOS transistor is connected between the first node and the first output terminal, and the second MOS transistor is connected between the second node and the second output terminal. The internal power supply potential generating circuit may be used to change the values of the first and second internal power supply potentials by setting the first internal power supply potential to the fixed potential and by setting the second internal power supply potential to a negative potential at the time of an erase operation.
申请公布号 US6333662(B1) 申请公布日期 2001.12.25
申请号 US19990468924 申请日期 1999.12.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UMEZAWA AKIRA;ATSUMI SHIGERU
分类号 G11C16/06;G11C8/08;G11C16/08;G11C16/12;H03K19/0185;(IPC1-7):H03L5/00;G11C7/00 主分类号 G11C16/06
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