SILICON WAFER AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer and a manufacturing method of the silicon wafer for depositing a silicon-germanium thin film with low defective density on the silicon wafer easily. SOLUTION: A silicon-germanium monocrystalline is formed in epitaxial growth on a (001) face of the silicon wafer on its surface. This film is a first silicon-germanium thin film. A crystal defect of the first silicon-germanium thin film 11 is removed by a selective etching (hydrogen fluoride/nitric acid). A second thin film 12 of silicon-germanium monocrystalline is deposited on the surface of the thin film 11. Then, the silicon-germanium thin film 12 with the low defective density can be deposited on a silicon wafer 10 easily. Moreover, this deposition can be carried out with conventional wafer manufacturing system.