发明名称 |
SUBSTRATE-PROCESSING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To enable a single substrate-processing device to deal with a thin film to a thick film. SOLUTION: An oxidizing device has a structure in which steam is introduced into a reaction chamber 1 from a steam generator outside the reaction chamber 1, and a substrate disposed in the reaction chamber 1 is subjected to an oxidization treatment process. An external combustion equipment 11 serving as a first steam generating device for generating steam, by burning hydrogen gas and oxygen gas and a water-generating equipment 12 serving as a second steam- generating device for generating water vapor by the use of hydrogen gas and oxygen gas without burning them are provided as the steam generator. A gas feed system 15 is used in common to feed hydrogen gas and oxygen gas to both the external combustion equipment 11 and water generating equipment 12 in common.
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申请公布号 |
JP2001351910(A) |
申请公布日期 |
2001.12.21 |
申请号 |
JP20000168425 |
申请日期 |
2000.06.06 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YOSHIDA YUJI;NAKAMURA YOSHIHISA;HANEDA YUKITO;WATANABE SEIJI |
分类号 |
H01L21/31;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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