发明名称 SUBSTRATE-PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To enable a single substrate-processing device to deal with a thin film to a thick film. SOLUTION: An oxidizing device has a structure in which steam is introduced into a reaction chamber 1 from a steam generator outside the reaction chamber 1, and a substrate disposed in the reaction chamber 1 is subjected to an oxidization treatment process. An external combustion equipment 11 serving as a first steam generating device for generating steam, by burning hydrogen gas and oxygen gas and a water-generating equipment 12 serving as a second steam- generating device for generating water vapor by the use of hydrogen gas and oxygen gas without burning them are provided as the steam generator. A gas feed system 15 is used in common to feed hydrogen gas and oxygen gas to both the external combustion equipment 11 and water generating equipment 12 in common.
申请公布号 JP2001351910(A) 申请公布日期 2001.12.21
申请号 JP20000168425 申请日期 2000.06.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YOSHIDA YUJI;NAKAMURA YOSHIHISA;HANEDA YUKITO;WATANABE SEIJI
分类号 H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 H01L21/31
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