Voltage detecting circuit for semiconductor memory device

摘要

A voltage detecting circuit includes a first voltage generator that provides a reference voltage, a second voltage generator that provides a comparison voltage in response to a boosted voltage, and a differential amplifier that provides an amplified difference signal to generate a voltage level detection signal in response to a voltage difference between the reference voltage and the comparison voltage. A bypass circuit is coupled to the amplified signal to detect a target VPP level suitable for a test mode by providing a current path in response to the comparison voltage when the comparison voltage reaches a predetermined level. The voltage detecting circuit thereby allows a precise and stable detecting operation to be performed regardless of the operation mode or process or temperature variations.