| 摘要 |
<p>The invention concerns an electrically erasable and programmable memory (MEM3) comprising at least a non-erasable secure zone. The invention is characterised in that the memory comprises means (ECCT1, ACC, MUX1, MUX2) for detecting and/or correcting reading errors in the secure zone, designed to record in the memory redundant bits and deliver an error signal (ERR) and/or to deliver a majority value bit when the redundant bits read in the memory are not of equal value.</p> |
