发明名称 Ett polaritetsskydd uppfyllt med MOSFET
摘要 <p>A polarity protection circuit contains a metal oxide semiconductor field effect transistor (FET) that pets its control voltage via an electrical connection from supply voltage lines and a transistor that pets its control voltage via another connection from the supply voltage lines. When a supply voltage has a wrong polarity the FET is in a non-conducting state. If in the supply voltage lines during normal operation there occurs a short circuit that tends to chance a direction of the current, the transistor rapidly discharges a gate charge of the FET, and the current flow in the wrong direction is prevented.</p>
申请公布号 FI20012483(A0) 申请公布日期 2001.12.17
申请号 FI20010002483 申请日期 2001.12.17
申请人 TELLABS OY, 发明人 JOKINEN,SAMI
分类号 H02H11/00;(IPC1-7):H02M 主分类号 H02H11/00
代理机构 代理人
主权项
地址