| 摘要 |
PROBLEM TO BE SOLVED: To form a good interface having a low interfacial level density between silicon dioxide and a semiconductor by improving the film quality of a silicon oxide film formed on the semiconductor by the chemical vapor growth method. SOLUTION: In this method of manufacturing semiconductor device, the silicon oxide film is formed on a semiconductor substrate composed of silicon carbide, diamond, etc., by the chemical vapor growth method and the semiconductor substrate carrying the silicon oxide film is heat-treated at a temperature which falls within the temperature range of 1,100-1,400 deg.C for 30 minutes or longer in an inert gas. After heat treatment, electrodes are formed on the heat- treated semiconductor substrate.
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