DIODE ELEMENT CIRCUIT AND SWITCHING CIRCUIT UTILIZING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a diode element circuit in which the manufacturing steps are not required to increase, and a small leak current and a high breakdown strength can be realized. SOLUTION: A junction between a base and collector of a vertical PNP transistor is used as a diode, and further a reverse bias voltage is applied to between a base and emitter of a parasitic PNP transistor of this PNP transistor, so that the diode in which a leak current is less and a breakdown strength is high is realized without increasing the manufacturing steps.