SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To decease the parasitic capacitors of data lines of a semiconductor memory device arranged with many data lines on memory cell arrays. SOLUTION: Read data line pair RDL and /RDL are arranged by each of four memory cell arrays and the column selection in data reading out is performed by four sub-read source lines SRGL. On the other hand, write data line pairs WDL and /WDL are arranged by each of the eight memory cell arrays and the column selection in data writing is performed by eight sub-write activation lines SWRL. The number of pieces of the read data line pairs and the write data line pairs and the memory cell arrays made respectively correspondent thereto are set at different numbers, by which the wiring pitch of the data lines is relieved and the parasitic capacitors may be suppressed while the drastic increase of the signal wiring for executing the column selection is averted.