| 摘要 |
PROBLEM TO BE SOLVED: To prevent formation of an anomalously grown layer at the interface between a first layer and a second layer, and to prevent serious degradation of optical output power of a quantum-well semiconductor laser, in forming a III-V compound semiconductor crystal layer comprising two or more kinds of group V elements by a metal-organic vapor phase growth method. SOLUTION: The second layer is grown after finishing the following steps; namely, a step in which, after growing the first layer, material gases for the group V elements of the first layer are supplied for a time of T1 (T1>0) seconds while the material supply for all group III elements is stopped, a next step in which a material gas for a group V element having the highest vapor pressure among the group V elements of the second layer is supplied for a time of T2 (T2>=0) seconds while the material supply for the group III elements is stopped, and a further next step in which the material gases for all the group V elements of the second layer are supplied for a time of T3 (T3>0) seconds while the material supply for the group III elements is stopped.
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