| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a constant performance which can form a damascene structure without using a stopper film having a high relative permittivity, and can accurately process a fine via hole with a high aspect ratio. SOLUTION: The method includes steps of forming a first insulating film on a semiconductor substrate subjected to surface processing of a desired shape, forming a desired via hole in the first insulating film, forming a second insulating film on the first insulating film having the vin hole formed therein, forming a third insulating film on the second insulating film, forming a wiring groove in the second and third insulating films, embedding metal in the wiring groove, and polishing the metal to form an embedding wiring. The first and second insulating films are made of different materials having low relative permittivities.
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