| 摘要 |
PROBLEM TO BE SOLVED: To overcome the defect that the change of the characteristic of a transistor caused by oxygen contained in a gate electrode film is generated, and thereby, the reliability of a thin-film semiconductor element is damaged. SOLUTION: In a manufacturing method of a thin-film semiconductor element, by subjecting a gate electrode film to a high-frequency induction heating in a reduction atmosphere, the temperature rise of the material out of which the gate electrode film is made is so performed as to remove oxygen from the inside of the gate electrode film. As a result, a highly reliable thin-film semiconductor element whose element characteristic changes little when a voltage is applied is provided.
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