| 摘要 |
<p>A lateral semiconductor device (20) such as LDMOS, a LIGBT, a lateral diode, a lateral GTO, a lateral JFET or a lateral BJT, comprising a drift region (12) having a first surface (22) and a first conductivity type, first and second conductive regions (4, 8) extending into the drift region from the first surface. The lateral semiconductor device further comprises an additional region (24) or several additional regions, having a second conductivity type, between the first and second semiconductor regions (4, 8), the additional region extending into the drift region from the first surface (22), wherein the additional region forms a junction dividing the electric field between the first and second semiconductor regions when a current path is established between the first and second semiconductor regions. This allows the doping concentration of the drift region to be increased, thereby lowering the on-resistance of the device.</p> |
