| 摘要 |
An infrared sensor has a stem with a metallic base serving as a ground and a ground terminal extending from the metallic base; a substrate disposed on the metallic base; a field effect transistor attached to the substrate; a pyroelectric element connected between the gate of the field effect transistor and ground; and a capacitor connected between ground and either the drain terminal or the source terminal of the field effect transistor. One of the electrodes of the capacitor is directly connected to the metallic base of the stem, while the other electrode of the capacitor is directly connected to the corresponding terminal by a conductive bonding material. |
