| 摘要 |
The present invention discloses a method of fabricating a thin film using an atomic layer deposition, the method including: a first step of disposing a silicon substrate in a reaction chamber; a second step of introducing a first reactive gas and a carrier gas into the reaction chamber during a first period such that the first reactive gas is chemically adsorbed on the silicon substrate, wherein the reaction chamber is set to a first pressure during the first period; a third step of introducing a second reactive gas into the reaction chamber during a second period such that the second reactive gas is chemically adsorbed on the silicon substrate and discharges a residual portion of the first reactive gas out of the reaction chamber, wherein the reaction chamber is set to a lower second pressure than the first pressure during the second period; and further introducing the second reactive gas into the reaction chamber for a third period such that the second reactive gas is further chemically adsorbed on the silicon substrate, wherein the reaction chamber is set to a higher third pressure than the first pressure during the third period.
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