| 摘要 |
It is an object of the present invention to provide a method for forming a semiconductor MOSFET device having polycide gate electrode by preventing the sidewall screen oxide from being abnormally formed, and according to an aspect of the present invention, there is provided a method for fabricating a MOSFET comprising a polycide gate electrode with titanium silicide on a semiconductor substrate, comprising the steps of: forming a polysilicon layer and a titanium layer on a gate insulating layer; performing a rapid thermal process for forming a titanium silicide layer under nitrogen-filled environment; and removing a titanium nitride layer, which is a byproduct formed on the titanium silicide layer during said b) step of performing the rapid thermal process.
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