发明名称 Semiconductor integrated circuit device having circuit generating reference voltage
摘要 A semiconductor integrated circuit device includes a reference voltage generating circuit that can be tuned without a circuit replacement when a process condition is varied. The reference voltage generating circuit is constituted such that two different circuit configurations having different temperature properties are switched by a first switch. In each of the circuit configurations, a switch control circuit in which tuning can be performed by switching a second switch generates a control signal based on a test mode and supplies the signal to the first switch for tuning. Thereafter, a fuse in the switch control circuit is blown off to generate a control signal, and reference voltage Vref is output.
申请公布号 US2001050590(A1) 申请公布日期 2001.12.13
申请号 US20010758273 申请日期 2001.01.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA AND 发明人 KOBAYASHI MAKO;MORISHITA FUKASHI;AKIYAMA MIHOKO;TAITO YASUHIKO;YAMAZAKI AKIRA;FUJII NOBUYUKI
分类号 G06F1/26;G05F1/46;G05F3/24;G06F1/32;H01L21/822;H01L27/04;(IPC1-7):G05F1/10 主分类号 G06F1/26
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