发明名称 |
Semiconductor integrated circuit device having circuit generating reference voltage |
摘要 |
A semiconductor integrated circuit device includes a reference voltage generating circuit that can be tuned without a circuit replacement when a process condition is varied. The reference voltage generating circuit is constituted such that two different circuit configurations having different temperature properties are switched by a first switch. In each of the circuit configurations, a switch control circuit in which tuning can be performed by switching a second switch generates a control signal based on a test mode and supplies the signal to the first switch for tuning. Thereafter, a fuse in the switch control circuit is blown off to generate a control signal, and reference voltage Vref is output.
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申请公布号 |
US2001050590(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
US20010758273 |
申请日期 |
2001.01.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA AND |
发明人 |
KOBAYASHI MAKO;MORISHITA FUKASHI;AKIYAMA MIHOKO;TAITO YASUHIKO;YAMAZAKI AKIRA;FUJII NOBUYUKI |
分类号 |
G06F1/26;G05F1/46;G05F3/24;G06F1/32;H01L21/822;H01L27/04;(IPC1-7):G05F1/10 |
主分类号 |
G06F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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