| 发明名称 |
Dielectric formation to seal porosity of low dielectic constant (low k) materials after etch |
| 摘要 |
A method is provided, the method including forming a first dielectric layer above a first structure layer, and forming a first opening in the first dielectric layer, the first opening having sidewalls. The method also includes forming a second dielectric layer on the sidewalls of the first opening.
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| 申请公布号 |
US2001051420(A1) |
申请公布日期 |
2001.12.13 |
| 申请号 |
US20000487531 |
申请日期 |
2000.01.19 |
| 申请人 |
BESSER PAUL R.;DAKSHINA-MURTHY SPIKANTEWARA;MARTIN JEREMY I.;SMITH JONATHAN B.;APELGREN ERIC M. |
发明人 |
BESSER PAUL R.;DAKSHINA-MURTHY SPIKANTEWARA;MARTIN JEREMY I.;SMITH JONATHAN B.;APELGREN ERIC M. |
| 分类号 |
H01L21/768;(IPC1-7):H01L21/20;H01L21/44;H01L21/476 |
主分类号 |
H01L21/768 |
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