发明名称 CHEMICAL-HYDRODYNAMIC ETCH PLANARIZATION
摘要 <p>The present invention relates to the planarization of surfaces, typically surfaces of integrated circuit wafers during fabrication, by non-contact means. The surface to be planarized ('wafer') is mounted in a suitable chuck or holder and caused to undergo relative motion in close proximity with, but not touching, an opposing, proximate surface. The introduction of etchant chemicals into the gap between the two surfaces results in removal of materials from the surface of the wafer. Several configurations of wafer and proximate surface are presened as well as etchant chemicals. Advantages of the present invention include reducing shearing forces on the wafer that tend to delaminate multilayer wafers. Also, etchants lacking abrasive particles tend to be easier to reclaim and recycle, (or easier to dispose of in an environmentally satisfactory manner), resulting in reduced costs for etchant chemicals.</p>
申请公布号 WO2001094076(A1) 申请公布日期 2001.12.13
申请号 US2001018218 申请日期 2001.06.05
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