发明名称 Plasma processing method
摘要 Disclosed is a plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting a target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.
申请公布号 US2001051232(A1) 申请公布日期 2001.12.13
申请号 US20010877145 申请日期 2001.06.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAKAI ITSUKO;OHIWA TOKUHISA
分类号 H05H1/00;B08B7/00;C23C16/44;C23C16/455;C23C16/52;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):H05H1/24;C23C16/00 主分类号 H05H1/00
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