发明名称 Oxide single crystal and method of manufacturing thereof
摘要 To provide an oxide single crystal of large size having the crystal structure of Ca3Ga2Ge4O14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO2 in a stoichiometrically excess amount, or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than 2 x 10<-1> atm.
申请公布号 EP0834605(B1) 申请公布日期 2001.12.12
申请号 EP19970115850 申请日期 1997.09.11
申请人 MURATA MANUFACTURING CO., LTD. 发明人 TAKAGI, HIROSHI;KUMATORIVA, MAKOTO;FUKUDA, TSUGUO
分类号 C30B15/00;C30B29/32;H01L21/208 主分类号 C30B15/00
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