发明名称 |
Oxide single crystal and method of manufacturing thereof |
摘要 |
To provide an oxide single crystal of large size having the crystal structure of Ca3Ga2Ge4O14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO2 in a stoichiometrically excess amount, or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than 2 x 10<-1> atm. |
申请公布号 |
EP0834605(B1) |
申请公布日期 |
2001.12.12 |
申请号 |
EP19970115850 |
申请日期 |
1997.09.11 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
TAKAGI, HIROSHI;KUMATORIVA, MAKOTO;FUKUDA, TSUGUO |
分类号 |
C30B15/00;C30B29/32;H01L21/208 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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