发明名称 Method of fabricating metal interconnect structure having outer air spacer
摘要 An outer air spacer structure, applicable to multilevel interconnects technologies, and the method of making the same are disclosed. The outer air spacer is adjacent to a metal line to provide a lower dielectric constant in a metal interconnect structure. The outer air spacer is formed by initially forming a first spacer adjacent to the metal line, followed by forming a second spacer on the first spacer. The first spacer is then removed to form an air gap between the second spacer and the metal line. The air gap is closed to form the outer air spacer by partially sealing the air gap with a portion of passivation layer that is deposited subsequently.
申请公布号 US6329279(B1) 申请公布日期 2001.12.11
申请号 US20000535495 申请日期 2000.03.24
申请人 UNITED MICROELECTRONICS CORP. 发明人 LEE ROBIN
分类号 H01L21/768;(IPC1-7):H01L21/476;H01L21/311;H01L21/320 主分类号 H01L21/768
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