发明名称 M-type microwave device with slanted field emitter
摘要 The present invention relates to M-type microwave devices and is aimed to improve effectiveness of using a working surface of field-electron emitters, to improve their reliability while increasing stability of field emission and service life of the device. These objects are solved in the design of a M-type microwave device, comprising an anode encircling a cylindrical evacuated cavity and a cathode assembly disposed co-axially inside the anode, said cathode assembly comprising a cylindrical rod with its surfaces having elements in the form of planar (film) field-electron emitters and secondary-electron emitters that provide a primary and a secondary electron emission, respectively. In doing so, the normal to planar field-electron emitters is not parallel and makes therewith an angle of more than 0 degrees. An end-face of the field-electron emitter is protected by a tunnel-thin dielectric layer containing impurities of various materials and materials having a low work function.
申请公布号 US6329753(B1) 申请公布日期 2001.12.11
申请号 US19990380247 申请日期 1999.08.30
申请人 LITTON SYSTEMS, INC. 发明人 MAKHOV VLADIMIR
分类号 H01J23/05;H01J25/50;(IPC1-7):H01J25/42 主分类号 H01J23/05
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