Semiconductor memory device and method of manufacturing the same

摘要

A semiconductor memory device and method of fabricating same is provided that has a plurality of ferroelectric memory cells and reference cells. The semiconductor memory device includes a capacitor of each memory cell being the same size as that of each reference cell. A voltage applied to each reference cell is higher than a voltage applied to each memory cell to read data out of the semiconductor memory device. A method of fabricating a ferroelectric substance for a semiconductor memory device includes dissolving zirconium n-butoxide and titanium iso-proxide in 2-methoxyethanol; chelating a resultant, obtained by dissolution, with acetylacetone; adding lanthanium (La) iso-proxide to the resultant and refluxing the resultant; adding lead (Pb) acetate trihydrate to the resultant, and stirring the resultant, using a nitric acid as a catalyzer; and carrying out spin-coating and thermal treatment processes on the resultant.