LASER ANNEALING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a polycrystal silicon thin film transistor used for a pixel switch or a drive circuit of a liquid crystal display in a mass production at a good yield. SOLUTION: In a laser annealing apparatus 1 for generating a polycrystal silicon by radiating a pulse laser beam to a amorphous silicon, a plurality of peak groups included in the beam radiated to a glass board O are detected by a biplanar phototube 18, an angle of a resonance mirror 11a of a laser unit 11 is changed to an optimum so that (second peak group)/(first peak group) of the beam becomes a range of 0.37 to 0.47 or (area of second peak group)/(area of first peak group) becomes a range of 0.65 to 0.85 under the condition that a fluence dependence becomes gentle based on a result analyzed by an analyzer 20 and thereby a polycrystal silicon of a uniform grain size can be obtained.