发明名称 EVALUATION TEST DEVICE OF SILICIDE FILM MANUFACTURING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide the evaluation test device of a silicide film manufacturing process capable of shortening the manufacturing process evaluation time of the silicide film and improving the reliability of process evaluation by quickly measuring the wire width and resistance value of the silicide film in an electric method without any need of measuring the pattern and wire width of the evaluation test device of the manufactured silicide film manufacturing process even in the case of the silicide film having narrow width of limit size or less. SOLUTION: The evaluation test device of the silicide film manufacturing process provided with a first pattern A comprising the crossing resistance pattern of a polycide layer formed on the field area 500 of the semiconductor board 500 and a second pattern B comprising the bridge resistance pattern of the polycide layer and the silicide layer formed on the active area 500a of the semiconductor board 500 is constituted.
申请公布号 JP2001338962(A) 申请公布日期 2001.12.07
申请号 JP20000373672 申请日期 2000.12.08
申请人 HYUNDAI ELECTRONICS IND CO LTD 发明人 JON CHAE KIMU
分类号 H01L21/66;H01L21/3205;H01L23/52;H01L23/544;(IPC1-7):H01L21/66;H01L21/320 主分类号 H01L21/66
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