| 摘要 |
PURPOSE: An MOCVD(metal organic chemical vapor deposition) method and an apparatus thereof are provided to stably provide source material by detecting number of moles of organic metal gas in gas pipe or source material container. CONSTITUTION: More than one source material containers(1a,1b,1c) provide organic metal gas. Detectors(11a,11b,11c,4a,4b,4c,13a,13b,13c,14a,14b,14c) detect parameter which can be converted to number of moles of the organic metal gas. A material temperature control device(MTCD) heats the organic metal in the source material containers(1a,1b,1c) if the temperature is below the minimum temperature required to form metal film. A suitable amount of organic metal gas is provided to a reactor(9) to form a thin film on a substrate(10).
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