| 摘要 |
PURPOSE: To obtain a method of peeling with excellent peeling property of a photoresist film, excellent peeling property of deposits produced after etching, and excellent corrosion resistance of a substrate where a metal layer or the like is formed, by using a peeling liquid composition for photoresist having a specified range of color difference in the L*a*b* color chart. CONSTITUTION: The peeling liquid composition for a photoresist shows 30 to 180 color difference (Δ E*ab) (with pure water as the reference) in the L*a*b* color chart defined by JIS Z 8730. In this method, the composition preferably shows 50 to 140 color difference (ΔE*ab). Moreover, the composition preferably has =<70% transmittance for light at 500 nm wavelength (for 1 cm cell length). In this method, the composition preferably contains at least an oxide of an aromatic hydroxyl compound. In the method of peeling, a resist pattern is peeled by using the abovementioned peeling liquid composition for a photoresist. Preferably, a substrate coated with an inorganic film is used.
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