| 发明名称 |
PLASMA ETCHING SILICON ELECTRODE PLATE GENERATING LESS PARTICLES |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching silicon electrode plate having less particle adhesion. SOLUTION: A plasma etching silicon electrode plate is made by a single crystal silicon or a casted silicon material having unilaterally solidified composition, with a COP(Crystal Originated Particle) defect density of 104 pcs/cm3 or less.
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| 申请公布号 |
JP2001338913(A) |
申请公布日期 |
2001.12.07 |
| 申请号 |
JP20000159451 |
申请日期 |
2000.05.30 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
WAKITA SABURO;SASAKI JUNICHI |
| 分类号 |
C23F4/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23F4/00 |
| 代理机构 |
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