| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment and its processing method by which a wafer potential in processing and the impedance from the wafer to an earth via plasma are obtained by measurement or calculation and the processing based on the impedance can be carried out. SOLUTION: This equipment comprises a wafer potential probe 24, a current/ voltage probe 17 for measuring at least one of the current or the voltage to be applied to a wafer stage, a calculation part for obtaining the impedance from the wafer to the earth via the plasma based on a wafer voltage value, the voltage value applied to the wafer stage or the current value, and a processing part for processing based on the impedance. As a result, the wafer voltage and the plasma impedance can be obtained precisely, and an etching with good reproducibility is achieved by controlling etching parameters on the basis of this information and the deterioration of yield can be prevented.
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