| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for improving the crystallization or crystallinity of an amorphous semiconductor film. SOLUTION: Laser having different wavelength is used for allowing the amorphous semiconductor film to be laser-annealed, thus improving the crystallization or crystallinity of the amorphous semiconductor film. First, the amorphous semiconductor film is laser-annealed by a laser having wavelength of 126 to 370 nm for obtaining a first crystalline semiconductor film by performing laser annealing. Then, the first crystalline semiconductor film is irradiated with a laser beam having a wavelength of 370 to 650 nm for forming a second crystalline semiconductor film. The obtained second crystalline semiconductor film has excellent crystallinity. When the second crystalline semiconductor film is set to the active layer of TFT, electric characteristics are also improved. When laser annealing is to be made, it is preferable that an optical system is used for processing a laser beam to a linear beam where a shape on an irradiation surface is linear.</p> |
