Shallow trench isolation with thin nitride liner

摘要

Forming isolation members embedded in a Si layer of an IC comprises: depositing a protective layer containing at least one layer of nitride on a top surface of a Si layer; etching through the protective layer to form a set of isolation mask apertures; etching through the set of isolation mask apertures in a RIE process to form a set of isolation trenches; depositing a conformal layer of nitride having a thickness 5 nm; depositing a CVD layer of oxide having a thickness sufficient to fill the set of isolation trenches; removing that portion of the CVD layer of oxide outside the set of isolation trenches to expose the at least one layer of nitride; stripping the at least one layer of nitride in H3PO4.