Method of forming composite silicon oxide layer over a semiconductro device

摘要

A method of forming a composite silicon oxide layer over a semiconductor device. The composite silicon oxide layer is formed between the semiconductor device and a doped silicate glass layer. The composite silicon oxide layer comprises two silicon oxide layers, each having a different silicon/oxide composition. The oxygen-rich oxide layer or silicon dioxide layer is formed directly above the semiconductor device, and the silicon-rich oxide layer is formed above the silicon dioxide layer next to the doped silicate glass layer. Both the silicon dioxide layer and the silicon-rich oxide layer are formed in the same plasma deposition chamber.