| 摘要 |
<p>An abrasive material which is especially excellent in the dispersion of abrasive grains even when the grains are contained in a large amount, and which has stable polishing properties and is effective in diminishing scratches. The abrasive material comprises a polishing part which can be obtained by introducing given amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrene dimer, and t-dodecyl mercaptan into an autoclave, reacting them at 75°C for 16 hours to obtain an emulsion of a copolymer, adjusting the pH of this emulsion to 8.5, adding thereto a cerium oxide powder having an average primary-particle diameter of 0.3 νm, stirring the resultant mixture to obtain an aqueous dispersion, thinly spreading this aqueous dispersion on a film, drying it, and then pressing the resultant dry mixture with a mold press. The polishing part may have a crosslinked structure. The abrasive material is suitable for use as, e.g., a polishing pad for polishing the surface of, e.g., a semiconductor wafer.</p> |
