LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER
摘要
Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al>0.94<Ga>0.06<As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 DEG C.
申请公布号
WO0193387(A2)
申请公布日期
2001.12.06
申请号
WO2001US17548
申请日期
2001.05.31
申请人
SANDIA CORPORATION;CHOQUETTE, KENT, D.;KLEM, JOHN, F.
