| 发明名称 |
Semiconductor device |
| 摘要 |
The invention relates to a semiconductor device comprising a bond pad structure, which bond pad structure enables analyses to be carried out at a level of a metal layer of the semiconductor device and comprises a matrix comprising trenches filled with a conductive material, which matrix is electrically contacted by the metal layer.
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| 申请公布号 |
US2001048105(A1) |
申请公布日期 |
2001.12.06 |
| 申请号 |
US20010829860 |
申请日期 |
2001.04.10 |
| 申请人 |
VAN DE GOOR ALBERTUS THEODORUS MARIA |
发明人 |
VAN DE GOOR ALBERTUS THEODORUS MARIA |
| 分类号 |
H01L21/66;H01L21/3205;H01L21/60;H01L23/485;H01L23/52;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/66 |
| 代理机构 |
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