发明名称 |
Method of forming silicon-based thin film, silicon-based thin film and photovoltaic element |
摘要 |
In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q = P o ×P R /S/d is controlled so as to be 50 or more, wherein P o (W) is a supplied power, S (cm 2 ) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and P R (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level. |
申请公布号 |
EP1160879(A2) |
申请公布日期 |
2001.12.05 |
申请号 |
EP20010113168 |
申请日期 |
2001.05.30 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KONDO, TAKAHARU;MATSUDA, KOICHI;HIGASHIKAWA, MAKOTO |
分类号 |
C23C16/24;C23C16/509;C30B25/10;H01L21/205;H01L31/0376;H01L31/04;H01L31/18;H01L31/20 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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