发明名称 |
Method for fabricating a silicon carbide semiconductor device |
摘要 |
<p>A method for fabricating a semiconductor device that includes a semiconductor layer, containing Si and C, for its active region. Ions of a dopant are implanted into an SiC substrate a number of times, thereby forming a doped layer with multiple dopant concentration peaks in the substrate. Thereafter, the substrate is placed and annealed in a chamber with an etching gas (e.g., hydrogen gas) supplied thereto. In this manner, while the substrate is being annealed, the upper part of the doped layer is removed with the lower part thereof left. Accordingly, the dopant concentration at the surface of the lower doped layer can be easily controlled to such a value as required for forming a Schottky or ohmic electrode thereon. In addition, the upper doped layer with a lot of defects is removed, and therefore the surface region of the substrate can have its crystallinity improved. <IMAGE></p> |
申请公布号 |
EP1160845(A2) |
申请公布日期 |
2001.12.05 |
申请号 |
EP20010112273 |
申请日期 |
2001.05.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKAHASHI, KUNIMASA;KITABATAKE, MAKOTO;UCHIDA, MASAO;YOKOGAWA, TOSHIYA;KUSUMOTO, OSAMU |
分类号 |
H01L21/28;H01L21/04;H01L21/265;H01L21/302;H01L21/331;H01L29/47;H01L29/78;H01L29/872;(IPC1-7):H01L21/265;H01L21/336;H01L21/324;H01L21/329 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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