发明名称 Read circuit for a nonvolatile memory
摘要 The read circuit comprises an array branch having an input array node connected, via an array bit line, to an array cell; a reference branch having an input reference node connected, via a reference bit line, to a reference cell; a current-to-voltage converter connected to an output array node of the array branch and to an output reference node of the reference branch to supply on the output array node and the output reference node the respective electric potentials correlated to the currents flowing in the array memory cell and, respectively, in the reference memory cell; and a comparator connected at input to the output array node and output reference node and supplying as output a signal indicative of the contents stored in the array memory cell; and an array decoupling stage arranged between the input array node and the output array node to decouple the electric potentials of the input and output array nodes from one another.
申请公布号 US6327184(B1) 申请公布日期 2001.12.04
申请号 US20000621019 申请日期 2000.07.21
申请人 STMICROELECTRONICS S.R.L. 发明人 MICHELONI RINO;CAMPARDO GIOVANNI;CRIPPA LUCA
分类号 G11C16/06;G11C16/28;(IPC1-7):G11C16/06 主分类号 G11C16/06
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