Semiconductor devices and methods for producing semiconductor devices

摘要

The invention is intended to form, on an insulating layer, a thin SiGe layer serving as an underlying layer for obtaining a strained silicon layer, and to provide a satisfactory strained Si layer. A SiGe layer 13 is formed on a Si substrate 11 and an oxygen ion implantation is effected with ensuring the detainment within the layer thickness of the SiGe layer 13. The SiGe layer 13 is lattice-relaxed by a heat treatment and a buried insulating layer 15 is formed simultaneously in the SiGe layer 13. A strained Si layer 17 is re-grown on the lattice-relaxed SiGe layer 13.