| 发明名称 |
Semiconductor photonic device |
| 摘要 |
A semiconductor photonic device has a Si substrate; a SiO2 film formed on the Si substrate; a ZnO film formed on the SiO2 film; and a semiconductor compound layer represented by InxGayAlzN (x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1) formed on the ZnO film.
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| 申请公布号 |
US6326645(B1) |
申请公布日期 |
2001.12.04 |
| 申请号 |
US19990385808 |
申请日期 |
1999.08.30 |
| 申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KADOTA MICHIO |
| 分类号 |
H01L33/32;H01S5/00;H01S5/32;H01S5/323;(IPC1-7):H01L29/12 |
主分类号 |
H01L33/32 |
| 代理机构 |
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