| 摘要 |
The present invention relates to a semiconductor device manufacturing method containing the step of polishing an insulating oxide film having an uneven surface, to improve a throughput in burying the insulating film into trenches and also improve flatness of a polished surface. The method comprises a step of forming a polishing stopping film 26 on a surface of a semiconductor substrate 21, a step of forming trenches 23a to 23d by etching the semiconductor substrate 21 via the opening portions, a step of forming an insulating film 27 in the trenches 23a to 23d and on the semiconductor substrate 21, and steps of first polishing the insulating film by using a first abrasive cloth 102 which has a polishing surface with first hardness while supplying a first slurry onto a polished surface of the insulating film 27 and then polishing the polished surface of the insulating oxide film 27 by using a second abrasive cloth 101 which has second hardness softer than the first hardness while supplying a second slurry onto the polished surface of the insulating film 27 until the polishing stopping film 26 is exposed.
|
