VERY NARROW BAND INJECTION SEEDED F2 LITHOGRAPHY LASER

摘要

PROBLEM TO BE SOLVED: To provide an injected seeded laser for use in integrated circuit lithography in which the wavelength can be regulated variably with a degree of freedom. SOLUTION: The tunable injected seeded very narrow band F2 lithography laser combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam operated in a first gain medium which beam is used to simulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.