| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that improves the coherency of the protection film between mutual electrode pads and resin, and its manufacturing method. SOLUTION: This semiconductor device is equipped with electrode pads 13 and 14 that are formed on an insulating film 11; a dummy pattern 12 that is formed on the insulating film 11 between the electrode pads 13 and 14, a protection film 17 that is formed on the dummy pattern 12, electrode pads 13 and 14, and insulating film 11; and resin 20 that is formed on the protection film 17. In this case, on the surface of the protection film 17 that is positioned on the dummy pattern 12, irregularities 17a is formed. The plane of the dummy pattern 12 has a cross or substantially circular shape.</p> |
