| 摘要 |
PROBLEM TO BE SOLVED: To enable to perfectly erase a path wherein electric charges are extracted along a side surface of an intergate insulating film (ONO film) and enable to improve characteristic of nonvolatile performance. SOLUTION: Trenches 21 are formed by self-alignment with floating gates 4. The intergate insulating film (ONO film) 5 is stuck on the whole memory cell region including the trenches 21, and control gates 6 are formed in the trenches 21 on which the intergate insulating film (ONO film) 5 is stuck.
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