发明名称 NO-GRAIN-BOUNDARY MAGNETORESISTANCE-EFFECT MATERIAL AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a no-grain-boundary magnetoresistance-effect material and a method of manufacturing the same, capable of forming an element and a thin film, without increasing the electrical resistance. SOLUTION: A non-grain-boundary magnetoresistance-effect material, using a molten bulk crystal having no grain boundary can be obtained through a step of mixing a raw-material oxide substance and a metal powder with a certain mixing ratio and molding them into a rod shape, a step of heating the rod-shaped molded body in Ar atmosphere for sintering, and a step of growing a crystal from the sintered body with a floating-zone melting method.
申请公布号 JP2001332422(A) 申请公布日期 2001.11.30
申请号 JP20000151172 申请日期 2000.05.23
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 MORITOMO HIROSHI
分类号 G01R33/09;G11B5/39;H01F1/34;H01F10/18;H01F41/14;H01F41/30;H01L43/08;H01L43/10;H01L43/12 主分类号 G01R33/09
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